Solid-State-Disk (SSD) im 2.5" SFF Format

500GB Solid-State-Disk (SSD), V-NAND 3bit MLC, intern, 2.5" (6.4 cm), SATA 6Gbit, 300TBW SSD-Leistung, interner Datendurchsatz: 560MBps (lesen)/ 530MBps (schreiben), 4KB Random Read: 13.000IOPS, 4KB Random Write: 36.000IOPS, max. 4KB Random Read: 98.000 IOPS, max. 4KB Random Write: 88.000IOPS, MTBF: 1.500.000 Stunden, 512MB Low Power DDR4 SDRAM Cache, TRIM-Unterstützung, Schlafmodus, Auto Garbage Collection Algorithm, Worldwide Name (WWN), TurboWrite Technology, 3-bit 3D V-NAND Technology, Low Power DDR4 SDRAM Cache, Samsung MKX Controller, S.M.A.R.T., 256-Bit-AES, IEEE 1667, RoHS, 60 Monate limitierte Herstellergarantie

1TB Solid-State-Disk (SSD), V-NAND 3bit MLC, intern, 2.5" (6.4 cm), SATA 6Gbit, 600TBW SSD-Leistung, interner Datendurchsatz: 560MBps (lesen)/ 530MBps (schreiben), 4KB Random Read: 13.000IOPS, 4KB Random Write: 36.000IOPS, max. 4KB Random Read: 98.000 IOPS, max. 4KB Random Write: 88.000IOPS, MTBF: 1.500.000 Stunden, 1GB Low Power DDR4 SDRAM Cache, TRIM-Unterstützung, Schlafmodus, Auto Garbage Collection Algorithm, Worldwide Name (WWN), TurboWrite Technology, 3-bit 3D V-NAND Technology, Low Power DDR4 SDRAM Cache, Samsung MKX Controller, S.M.A.R.T., 256-Bit-AES, IEEE 1667, RoHS, 60 Monate limitierte Herstellergarantie

1TB Solid-State-Disk (SSD), V-NAND 3bit MLC, intern, 2.5" (6.4 cm), SATA 6Gbit, 600TBW SSD-Leistung, interner Datendurchsatz: 560MBps (lesen)/ 530MBps (schreiben), 4KB Random Read: 13.000IOPS, 4KB Random Write: 36.000IOPS, max. 4KB Random Read: 98.000 IOPS, max. 4KB Random Write: 88.000IOPS, MTBF: 1.500.000 Stunden, 1GB Low Power DDR4 SDRAM Cache, TRIM-Unterstützung, Schlafmodus, Auto Garbage Collection Algorithm, Worldwide Name (WWN), TurboWrite Technology, 3-bit 3D V-NAND Technology, Low Power DDR4 SDRAM Cache, Samsung MKX Controller, S.M.A.R.T., 256-Bit-AES, IEEE 1667, RoHS, 60 Monate limitierte Herstellergarantie

4TB Solid-State-Disk (SSD), V-NAND 3bit MLC, intern, 2.5" (6.4 cm), SATA 6Gbit, 2.400TBW SSD-Leistung, interner Datendurchsatz: 560MBps (lesen)/ 530MBps (schreiben), 4KB Random Read: 13.000IOPS, 4KB Random Write: 36.000IOPS, max. 4KB Random Read: 98.000 IOPS, max. 4KB Random Write: 88.000IOPS, MTBF: 1.500.000 Stunden, 4GB Low Power DDR4 SDRAM Cache, TRIM-Unterstützung, Schlafmodus, Auto Garbage Collection Algorithm, Worldwide Name (WWN), TurboWrite Technology, 3-bit 3D V-NAND Technology, Low Power DDR4 SDRAM Cache, Samsung MKX Controller, S.M.A.R.T., 256-Bit-AES, IEEE 1667, RoHS, 60 Monate limitierte Herstellergarantie